? 2004 ixys all rights reserved v ces = 1700 v i c25 = 16 a v ce(sat) = 5.0 v t fi(typ) = 40 ns ixgh/ixgt 16n170a ixgh/ixgt 16n170ah1 c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixgh) features z international standard packages jedec to-268 and jedec to-247 ad z high current handling capability z mos gate turn-on - drive simplicity z rugged npt structure z molding epoxies meet ul 94 v-0 flammability classification z sonic tm fast recovery copack diode applications z capacitor discharge & pulser circuits z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies advantages z high power density z suitable for surface mounting z easy to mount with 1 screw, (isolated mounting screw hole) ds99235(10/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1700 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces 16n170a 50 a v ge = 0 v, note 1 16n170ah1 100 a t j = 125 c 16n170a 750 a 16n170ah1 1.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 4.0 5.0 v t j = 125 c 4.8 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c16a i c90 t c = 90 c8a i cm t c = 25 c, 1 ms 40 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 40 a (rbsoa) clamped inductive load @ 0.8 v ces t sc t j = 125 c, v ce = 1200 v; v ge = 15 v, r g = 22 ? 10 s p c t c = 25 c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3) to-247 1.13/10nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s plastic body for 10s 250 c weight to-247 6 g to-268 4 g to-268 (ixgt) g e high voltage igbt c (tab) advance technical data h1
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c25 ; v ce = 10 v 6 10 s note 2 c ies 1700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 16n170a 83 pf 16n170ah1 125 pf c res 30 pf q g 65 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 13 nc q gc 24 nc t d(on) 36 ns t ri 57 ns t d(off) 200 350 ns t fi 40 150 ns e off 0.9 1.5 mj t d(on) 38 ns t ri 59 ns e on 16n170a 1.5 mj 16n170ah1 2.5 mj t d(off) 200 ns t fi 55 ns e off 1.1 mj r thjc 0.65 k/w r thck (to-247) 0.25 k/w dim. mi llimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 ad outline inductive load, t j = 125 c i c = i c25 , v ge = 15 v r g = 10 ?, v ce = 0.5 v ces note 3 inductive load, t j = 25 c i c = i c25 , v ge = 15 v r g = 10 ?, v ce = 0.5 v ces note 3 ixgh/ixgt 16n170a ixgh/ixgt 16n170ah1 to-268 outline dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 notes: 1. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. pulse test, t 300 s, duty cycle 2 % 3. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g . reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 20 a, v ge = 0 v 2.5 2.95 v t j = 125c 2.5 v i rm i f = 20 a; -di f /dt = 150 a/ s15a t rr v ge = 0 v; v r = 1200 v 80 ns i rm t j = 125c 20 a t rr 200 ns r thjc 0.9 k/w
|
